Dr. Noelle Gogneau, 39 years old, is a CNRS scientist (CR1) working at Center for Nanosciences and Nanotechnologies (C2N-CNRS). She received her Master and Ph.D. degree in Physics in 2001 and in 2004, respectively. During her PhD period, she has focused her research on the growth of GaN/AlN quantum dots by PA-MBE, with the development of a new epitaxial technique to grow the nanostructures, named Modified Stransky-Krastanow growth mode. After a post-doctoral position at the Laboratory of Physics of Nanostructures – EPFL – Lausanne, Switzerland from 2004 to 2006, centred on the growth of (Ga,Al)As/GaAs nanowires and quantum dots on patterned substrate by MOVPE, she joined the Laboratory for Photonic and Nanostructures (today the C2N-CNRS) as CNRS researcher in 2006. From 2006 to 2011, she was focus her research on the selective growth of In(P)As/InP quantum dots on nano-patterned substrate by MOVPE for the single photon source emission.

From July 2011, her research activities are mainly centered on the growth of nitrides nanowires by PA-MBE, the structural and piezoelectric characterization of nanostructures. She leads the activity on piezo-generators based on III-N NWs and is the project officer for three projects on this subject. She currentlyinitiates the activity on Gas-sensors based on III-N NWs, and sShe is also involved in the growth and electrical characterization of epitaxial Graphene film synthesis by sublimation of SiC and by CVD.

N. Gogneauhas been the Scientific coordinator of the“Surface Nanostructuration” axis (2013-2016) and is currently the Scientific coordinator of the “Properties and application of epitaxial systems” axis (2017-2020) of the French research group PULSE, dedicated to epitaxy of semiconductor systems with an in-depth understanding of the growth mechanisms and the development of innovative approach in order to allow major progress.