Tetyana V. TORCHYNSKA is Professor of Physics at National Polytechnic Institute of Mexico. She received her M.S. degree in Solid State Physics at the National Technical University of Ukraine, Kiev; and her Ph. D and Doctor Habilitation degrees in Physics and Mathematics at Institute of Semiconductor Physics at National Academy of Sciences, Kiev, Ukraine. She served as Leader Scientist and Chief of Department in the Institute of Semiconductor Physics at National Academy of Sciences, Kiev. Ukraine. In 1999 she obtained Professor Position in the Material Science Department at National Polytechnic Institute of Mexico and since that she has been working in Mexico City.
Her current research interest is in optical investigation of nanocrystals and quantum dots of the great variety of semiconductors of groups IV, III-V and II-VI for applications in optoelectronics, microelectronics, spintronic, biology and medicine.T.V. Torchynska is the author of over 400 research articles; two monographs “Mechanisms of Degradation of III-V Semiconductor Light-Emitting Diodes and Lasers”, “Harwood Academic Publisher”, 1997, and “Nanocrystals and quantum dots of group IV semiconductors”, American Scientific Publisher, 2010; 20 book chapters and 14 patents
Current Research
• Prof. P. G. Eliseev,Prof. K. J. Malloy,Dr. A. Stintz, (CHTM, University New Mexico, Albuquerque, NM, USA)
Excitons in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures
• Prof. Ye. Goldstein (Racah Institute of Physics, Hebrew University, Israel)
Ballistic effect in emission of Si quantum dots in silicon oxide films
• Prof. L.Khomenkova (V. Lashkaryov Institute of Semiconductor Physics at NASU, Ukraine) and A. Slaoui (ICube, Strasbourg, France)
Variety of Light Emitting Mechanisms in the Si-rich-SiNX Films of different stoichiometry
• Prof. S. Ostapenko (Florida State University, USA) and Dr. T. Zhukov (H.Lee Moffitt Cancer Center and Research Institute, Tampa, FL, USA)
Emission variety of core/shell CdSe(Te)/ZnS quantum dots bioconjugated to antibodies
• Prof. A.V. Kolobov (LAOTECH—National Institute for Advanced Industrial Science and Technology, Tsukuba, Japan)
Visible emission mechanism of Ge rich SiOx layers
• Dr. M. Mynbaeva (Ioffe Institute at Russian Academy of Sciences, St Petersburg, Russian Federation)
Size dependent emission of porous SiC layers
• Prof. Y. Matsumoto (CINVESTAV-IPN, Mexico)
Optical properties of Siquantum dots in amorphous silicon matrix
• Prof. L. Shcherbyna (V. Lashkaryov Institute of Semiconductor Physics at NASU, Ukraine)
Doping impact on Structure and visible emission of ZnO nanocrystals
• Prof. I. Balberg (Racah Institute of Physics, Hebrew University, Israel)
Emission of Si quantum dotsin Al2O3 matrix
Editorships
1. Torchynska, T.V., Khomenkova, L. Editors of the session: "Symposium on theory, modeling, investigation and simulation of low-dimensional semiconductor systems" published in AIP Conference Proceedings, 2014, ICCMSE 2014 Congress, Athens, Greece, 04-07 Abril, 2014
2.T. V. Torchynska, L. Khomenkova, G. Polupan, G. Burlak, Editors de Special Issue ‘“Low-Dimensional semiconductor structures”inPhysica B (Elsevier Co.), 453 (2014)1, ISSN 0921-4526
3.T. V. Torchynska, L. Khomenkova, G. Polupan, G. Burlak, Editors of MRS Proceeding published by Mater. Res. Soc. Symp. Proc. Vol. 1617 © 2014, IMRC 2013 Congress- Cambridge Scientific publisher.ISBN 978-1-60511-594-8.
4. Tetyana V. Torchynska, Yuri Vorobiev, Zsolt Horvath, Editors of Special Issue ‘“Low-Dimensional Nanostructures for Optoelectronics and Memory Devices” of Physica E (Elsevier Co.), v.51, 2013.
5. Tetyana V. Torchynska, Yuri Vorobiev, Zsolt Horvath, Editors of MRS Proceeding published on line, Mater. Res. Soc. Symp. Proc. Vol. 1534 © 2013, IMRC 2012Congress - Cambridge Scientific publisher http://journals.cambridge.org/action/displayIssue?jid=OPL&volumeId=1534&issueId=-1
6.Book: “Nanocrystals and quantum dots of group IV semiconductors” Editors T. V. Torchynska and Yu. Vorobiev, American Scientific Publisher, 2010, ISBN: 1-58883-154-X.p.1-41.
Conference Organization in the last 5 years
